? 2012 ixys corporation, all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c - 500 v v dgr t j = 25 c to 150 c, r gs = 1m - 500 v v gss continuous 20 v v gsm transient 30 v i d25 t c = 25 c - 22 a i dm t c = 25 c, pulse width limited by t jm -120 a i a t c = 25 c - 40 a e as t c = 25 c 3.5 j dv/dt i s i dm , v dd v dss , t j 150 c 10 v/ns p d t c = 25 c 312 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6mm (0.062 in.) from case for 10s 300 c t sold plastic body for 10s 260 c v isol 50/60 h z ,rms, t= 1min 2500 v~ m d mounting force 20..120/4.5..27 n/lb. weight 5 g symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = - 250 a - 500 v v gs(th) v ds = v gs , i d = -1ma - 2.0 - 4.0 v i gss v gs = 20v, v ds = 0v 100 na i dss v ds = v dss , v gs = 0v - 50 a t j = 125 c - 250 a r ds(on) v gs = -10v, i d = - 20a, note 1 260 m polarp tm power mosfet p-channel enhancement mode avalanche rated IXTR40P50P v dss = - 500v i d25 = - 22a r ds(on) 260m ds99937c(12/12) features z silicon chip on direct-copper bond (dcb) substrate - ul recognized package - isolated mounting surface - 2500v~ electrical isolation z dynamic dv/dt rating z avalanche rated z fast intrinsic diode z the rugged polarp tm process z low q g z low drain-to-tab capacitance z low package inductance advantages z easy to mount z space savings z high power density applications z high-side switches z push pull amplifiers z dc choppers z automatic test equipment z current regulators g = gate d = drain s = source isoplus247 e153432 g s d isolated tab
IXTR40P50P ixys reserves the right to change limits, test conditions, and dimensions. symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = -10v, i d = - 20a, note 1 23 38 s c iss 11.5 nf c oss v gs = 0v, v ds = - 25v, f = 1mhz 1150 pf c rss 93 pf t d(on) 37 ns t r 59 ns t d(off) 90 ns t f 34 ns q g(on) 205 nc q gs v gs = -10v, v ds = 0.5 ? v dss , i d = - 20a 55 nc q gd 75 nc r thjc 0.40 c/w r thcs 0.15 c/w source-drain diode symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. i s v gs = 0v - 40 a i sm repetitive, pulse width limited by t jm -160 a v sd i f = - 20a, v gs = 0v, note 1 - 3.0 v t rr 477 ns q rm 14.5 c i rm - 61 a ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 note 1: pulse test, t 300 s, duty cycle, d 2%. resistive switching times v gs = -10v, v ds = 0.5 ? v dss , i d = - 20a r g = 1 (external) i f = - 20a, -di/dt = -150a/ s v r = -100v, v gs = 0v isoplus247 (ixtr) outline 1 - gate 2,4 - drain 3 - source
? 2012 ixys corporation, all rights reserved IXTR40P50P fig. 6. maximum drain current vs. case temperature -24 -20 -16 -12 -8 -4 0 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes fig. 1. output characteristics @ t j = 25oc -40 -35 -30 -25 -20 -15 -10 -5 0 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 v ds - volts i d - amperes v gs = -10v - 7v - 5 v - 6 v fig. 2. extended output characteristics @ t j = 25oc -90 -80 -70 -60 -50 -40 -30 -20 -10 0 -30 -25 -20 -15 -10 -5 0 v ds - volts i d - amperes v gs = -10v - 5 v - 6 v - 7 v fig. 3. output characteristics @ t j = 125oc -40 -35 -30 -25 -20 -15 -10 -5 0 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 v ds - volts i d - amperes v gs = -10v - 7v - 6v - 5v fig. 4. r ds(on) normalized to i d = - 20a value vs. junction temperature 0.4 0.8 1.2 1.6 2.0 2.4 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = -10v i d = - 40a i d = - 20a fig. 5. r ds(on) normalized to i d = - 20a value vs. drain current 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 -90 -80 -70 -60 -50 -40 -30 -20 -10 0 i d - amperes r ds(on) - normalized v gs = -10v t j = 25oc t j = 125oc
IXTR40P50P ixys reserves the right to change limits, test conditions, and dimensions. fig. 7. input admittance -70 -60 -50 -40 -30 -20 -10 0 -6.5 -6.0 -5.5 -5.0 -4.5 -4.0 -3.5 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 8. transconductance 0 10 20 30 40 50 60 70 -70 -60 -50 -40 -30 -20 -10 0 i d - amperes g f s - siemens t j = - 40oc 25oc 125oc fig. 9. forward voltage drop of intrinsic diode -140 -120 -100 -80 -60 -40 -20 0 -4.0 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 10. gate charge -10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 0 20 40 60 80 100 120 140 160 180 200 220 q g - nanocoulombs v gs - volts v ds = - 250v i d = - 20a i g = -1ma fig. 11. capacitance 10 100 1,000 10,000 100,000 -40 -35 -30 -25 -20 -15 -10 -5 0 v ds - volts capacitance - picofarads f = 1 mh z c iss c rss c oss fig. 12. forward-bias safe operating area 0.1 1 10 100 1000 10 100 1000 v ds - volts i d - amperes t j = 150oc t c = 25oc single pulse 25s 1ms 100s r ds(on) limit 10ms dc - - - --- - 100ms -
? 2012 ixys corporation, all rights reserved ixys ref: t_40p50p(b9) 03-06-08-a IXTR40P50P fig. 13. maximum transient thermal impedance 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w
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